- 您现在的位置：买卖IC网 > Sheet目录464 > IXTP50N20PM (IXYS)MOSFET N-CH 200V 20A TO-220
IXTP50N20PM
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
ISOLATED TO-220 (I XTP...M )
g fs
C iss
C oss
C rss
V DS = 10V, I D = 25A, Note 1
V GS = 0V, V DS = 25V, f = 1MHz
12
23
2720
490
105
S
pF
pF
pF
t d(on)
Resistive Switching Times
26
ns
1
2
3
t r
t d(off)
t f
Q g(on)
Q gs
Q gd
R thJC
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
R G = 10 Ω (External)
V GS = 10V, V DS = 0.5 ? V DSS , I D = 25A
35
70
30
70
17
37
ns
ns
ns
nC
nC
nC
1.66 ° C/W
R thCS
0.50
° C/W
Terminals:
1 - Gate
2 - Drain (Collector)
3 - Source (Emitter)
Source-Drain Diode
Symbol Test Conditions
(T J = 25 ° C, unless otherwise specified)
Characteristic Values
Min. Typ. Max.
I S
I SM
V SD
t rr
Q RM
V GS = 0V
Repetitive, pulse width limited by T JM
I F = 50A, V GS = 0V, Note 1
I F = 25A, -di/dt = 100A/ μ s
V R = 100V, V GS = 0V
150
2.0
50
120
1.5
A
A
V
ns
μ C
Note 1: Pulse test, t ≤ 300 μ s; duty cycle, d ≤ 2%.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
4,931,844
5,049,961
5,237,481
6,162,665
6,404,065 B1
6,683,344 6,727,585 7,005,734 B2
7,157,338B2
by one or more of the following U.S. patents: 4,850,072
5,017,508
5,063,307
5,381,025
6,259,123 B1
6,534,343
6,710,405 B2 6,759,692 7,063,975 B2
4,881,106
5,034,796
5,187,117
5,486,715
6,306,728 B1
6,583,505
6,710,463
6,771,478 B2 7,071,537
发布紧急采购，3分钟左右您将得到回复。
相关PDF资料
IXTP64N055T
MOSFET N-CH 55V 64A TO-220
IXTP70N085T
MOSFET N-CH 85V 70A TO-220
IXTP7N60PM
MOSFET N-CH 600V 4A TO-220
IXTP7N60P
MOSFET N-CH 600V 7A TO-220
IXTP8N50PM
MOSFET N-CH 500V 4A TO-220
IXTP8N50P
MOSFET N-CH 500V 8A TO-220
IXTQ102N15T
MOSFET N-CH 150V 102A TO-3P
IXTQ110N055P
MOSFET N-CH 55V 110A TO-3P
相关代理商/技术参数
IXTP50N25T
功能描述:MOSFET 50 Amps 250V 50 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP52P10P
功能描述:MOSFET -52.0 Amps -100V 0.050 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP54N30T
功能描述:MOSFET 54 Amps 300V 72 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP55N075T
功能描述:MOSFET 55 Amps 75V 17.0 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP56N15T
功能描述:MOSFET 56 Amps 150V 36 Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP5N50P
功能描述:MOSFET 4.8 Amps 500V 1.4 Ohms Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP5N60P
功能描述:MOSFET 5.0 Amps 600 V 1.6 Ohm Rds RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
IXTP5P15
制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 150V V(BR)DSS | 5A I(D) | TO-220